MRF9080

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LR3

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N?ChannelEnhancement?ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge?signal,common?sourceamplifierapplicationsin26voltbasestationequipment. ?TypicalPer

MRF9080LSR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LSR3

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N?ChannelEnhancement?ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge?signal,common?sourceamplifierapplicationsin26voltbasestationequipment. ?TypicalPer

MRF9080R3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080SR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LR3

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF9080LR3_08

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF9080LR3

Package：SOT-957A；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ NI-780

NXP USA Inc.

MRF9080LR5

Package：SOT-957A；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ NI-780

NXP USA Inc.