MSM13Q0150中文資料沖電線數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

Oki’s 0.3 5 μm ASIC products deliver ultra-high performance and high density at low power dissipation. The MSM13Q0000/14Q0000 series devices (referred to as “MSM13Q/14Q”) are implemented with the industry-standard Cell-Based Array (CBA) architecture in a Sea-of-Gates (SOG) structure. Built in a 0.35 μm drawn CMOS technology (with an L-Effective of 0.27 μm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. The semiconductor process is adapted from Oki’s production-proven 64-Mbit DRAM manufacturing process.

FEATURES

? 0.35 μm drawn 3- and 4-layer metal CMOS

? Optimized 3.3-V core

? Optimized 3-V I/O and 3-V I/O that is 5-V tolerant

? CBA SOG architecture

? Over 1.0M raw gates and 352 pads

? User-configurable I/O with VSS, VDD, TTL, 3-state, and 1- to 24-mA options

? Slew-rate-controlled outputs for low-radiated noise

? H-clock tree cells which reduce the maximum skew for clock signals