MT16HTS51264HY-667A1-ND中文資料鎂光數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? 200-pin, small-outline dual in-line memory module

(SODIMM)

? Fast data transfer rates: PC2-3200, PC2-4200, or

PC2-5300

? 2GB (256 Meg x 64) or 4GB (512 Meg x 64)

? VDD = VDDQ 1.8V

? VDDSPD = 1.7–3.6V

? JEDEC-standard 1.8V I/O (SSTL_18-compatible)

? Differential data strobe (DQS, DQS#) option

? 4n-bit prefetch architecture

? Multiple internal device banks for concurrent operation

? Programmable CAS latency (CL)

? Posted CAS additive latency (AL)

? WRITE latency = READ latency - 1 tCK

? Programmable burst lengths (BL): 4 or 8

? Adjustable data-output drive strength

? 64ms, 8192-cycle refresh

? On-die termination (ODT)

? Serial presence detect (SPD) with EEPROM

? Gold edge contacts

? Dual-rank, TwinDie? (2COB) DRAM devices