MT16VDDF6464HY-335存儲卡模塊的存儲器-模塊規(guī)格書PDF中文資料

General Description

The MT16VDDF6464H and MT16VDDF12864H are high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration. These modules use internally configured quadbank DRAM devices.

Features

? 200-pin, small-outline, dual in-line memory module (SODIMM)

? Fast data transfer rates: PC1600, PC2100, and PC2700

? Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components

? 512MB (64 Meg x 64), 1GB (128 Meg x 64)

? VDD = VDDQ = +2.5V

? VDDSPD = +2.3V to +3.6V

? 2.5V I/O (SSTL_2 compatible)

? Commands entered on each positive CK edge

? DQS edge-aligned with data for READs; centeraligned with data for WRITEs

? Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle

? Bidirectional data strobe (DQS) transmitted/ received with data—i.e., source-synchronous data capture

? Differential clock inputs CK and CK#

? Four internal device banks for concurrent operation

? Programmable burst lengths: 2, 4, or 8

? Auto precharge option

? Auto Refresh and Self Refresh Modes

? 7.8125μs maximum average periodic refresh interval

? Serial Presence Detect (SPD) with EEPROM

? Programmable READ CAS latency

? Gold edge contacts