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MT250QL01GABA1E14-0SATES中文資料鎂光數(shù)據(jù)手冊(cè)PDF規(guī)格書
廠商型號(hào) |
MT250QL01GABA1E14-0SATES |
功能描述 | Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase |
文件大小 |
1.19013 Mbytes |
頁(yè)面數(shù)量 |
93 頁(yè) |
生產(chǎn)廠商 | Micron Technology |
企業(yè)簡(jiǎn)稱 |
Micron【鎂光】 |
中文名稱 | 美國(guó)鎂光科技有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2024-12-29 23:00:00 |
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MT250QL01GABA1E14-0SATES規(guī)格書詳情
Features
? SPI-compatible serial bus interface
? Single and double transfer rate (STR/DTR)
? Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
? Dual/quad I/O commands for increased throughput
up to 90 MB/s
? Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
? Execute-in-place (XIP)
? PROGRAM/ERASE SUSPEND operations
? Volatile and nonvolatile configuration settings
? Software reset
? Additional reset pin for selected part numbers
? Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
? Erase capability
– Bulk erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
? Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
? Electronic signature
– JEDEC-standard 3-byte signature (BA18h)
– Extended device ID: two additional bytes identify
device factory options
? JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
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---|---|---|---|---|---|---|---|
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10000 |
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ST |
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8650 |
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139 |
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