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MT250QL01GABA1EW9-0SATES中文資料鎂光數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MT250QL01GABA1EW9-0SATES
廠商型號(hào)

MT250QL01GABA1EW9-0SATES

功能描述

Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

文件大小

1.19013 Mbytes

頁(yè)面數(shù)量

93 頁(yè)

生產(chǎn)廠商 Micron Technology
企業(yè)簡(jiǎn)稱

Micron鎂光

中文名稱

美國(guó)鎂光科技有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-29 10:16:00

MT250QL01GABA1EW9-0SATES規(guī)格書(shū)詳情

Features

? SPI-compatible serial bus interface

? Single and double transfer rate (STR/DTR)

? Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

? Dual/quad I/O commands for increased throughput

up to 90 MB/s

? Supported protocols in both STR and DTR

– Extended I/O protocol

– Dual I/O protocol

– Quad I/O protocol

? Execute-in-place (XIP)

? PROGRAM/ERASE SUSPEND operations

? Volatile and nonvolatile configuration settings

? Software reset

? Additional reset pin for selected part numbers

? Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

– Permanent lock with PROGRAM OTP command

? Erase capability

– Bulk erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

? Security and write protection

– Volatile and nonvolatile locking and software

write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits

(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

? Electronic signature

– JEDEC-standard 3-byte signature (BA18h)

– Extended device ID: two additional bytes identify

device factory options

? JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)

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