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MT28F640J3RG-15中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

MT28F640J3RG-15
廠商型號

MT28F640J3RG-15

功能描述

Q-FLASHTM MEMORY

文件大小

548.36 Kbytes

頁面數(shù)量

52

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

Micron鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

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更新時間

2025-3-3 22:59:00

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MT28F640J3RG-15規(guī)格書詳情

GENERAL DESCRIPTION

The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks.

Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks.

These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility.

FEATURES

? x8/x16 organization

? One hundred twenty-eight 128KB erase blocks (128Mb)

Sixty-four 128KB erase blocks (64Mb)

Thirty-two 128KB erase blocks (32Mb)

? VCC, VCCQ, and VPEN voltages:

2.7V to 3.6V VCC operation

2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation

2.7V to 3.6V, or 5V VPEN application programming

? Interface Asynchronous Page Mode Reads:

150ns/25ns read access time (128Mb)

120ns/25ns read access time (64Mb)

110ns/25ns read access time (32Mb)

? Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition

? Security OTP block feature Permanent block locking (Contact factory for availability)

? Industry-standard pinout

? Inputs and outputs are fully TTL-compatible

? Common Flash Interface (CFI) and Scalable Command Set

? Automatic write and erase algorithm

? 4.7μs-per-byte effective programming time using write buffer

? 128-bit protection register

64-bit unique device identifier

64-bit user-programmable OTP cells

? 100,000 ERASE cycles per block

? Automatic suspend options:

Block Erase Suspend-to-Read

Block Erase Suspend-to-Program

Program Suspend-to-Read

產(chǎn)品屬性

  • 型號:

    MT28F640J3RG-15

  • 制造商:

    MICRON

  • 制造商全稱:

    Micron Technology

  • 功能描述:

    Q-FLASHTM MEMORY

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
MRON/美光
23+
NA/
274
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
MICRON
2016+
TSOP56
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
MICRON
0540+
TSOP56
274
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
MICRON/鎂光
22+
TSOP
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價
MICRON/美光
TSOP56
125000
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
詢價
-
23+
12300
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
Micron
21+
56TSOP I
13880
公司只售原裝,支持實單
詢價
MICRON
2025+
TSOP
3505
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
詢價
MICRON
2016+
TSOP
4558
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詢價
MICRON
22+23+
TSOP
22024
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價