首頁(yè) >MT28F800B3>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT28F800B3 | FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | |
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
FLASH MEMORY GENERALDESCRIPTION TheMT28F008B3(x8)andMT28F800B3(x16/x8)arelow-voltage,nonvolatile,electricallyblock-erasable(flash),programmablememorydevicescontaining8,388,608bitsorganizedas524,288words(16bits)or1,048,576bytes(8bits).Writinganderasingthedeviceisdonewitha | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
包裝：卷帶（TR） 封裝/外殼：44-SOIC（0.496"，12.60mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC FLASH 8MBIT PARALLEL 44SOP | Micron Technology Inc. Micron Technology Inc. | Micron Technology Inc. | ||
包裝：卷帶（TR） 封裝/外殼：44-SOIC（0.496"，12.60mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC FLASH 8MBIT PARALLEL 44SOP | Micron Technology Inc. Micron Technology Inc. | Micron Technology Inc. | ||
包裝：卷帶（TR） 封裝/外殼：44-SOIC（0.496"，12.60mm 寬） 類別：集成電路（IC） 存儲(chǔ)器 描述：IC FLASH 8MBIT PARALLEL 44SOP | Micron Technology Inc. Micron Technology Inc. | Micron Technology Inc. |
詳細(xì)參數(shù)
- 型號(hào)：
MT28F800B3
- 制造商：
MICRON
- 制造商全稱：
Micron Technology
- 功能描述：
FLASH MEMORY
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICRON |
23+ |
NA |
131 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
MT |
2021+ |
TSOP |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
23+ |
TSSOP |
12032 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | |||
MT |
23+ |
TSOP |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
MICRON |
06+ |
TSOP |
1000 |
全新原裝 絕對(duì)有貨 |
詢價(jià) | ||
MOTOROLA |
15+ |
TSSOP |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
MT |
SOP |
122 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
Micron |
23+ |
TSOP |
20000 |
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨 |
詢價(jià) | ||
MICRON |
2016+ |
TSOP |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個(gè)別型號(hào)可以免費(fèi)送樣品! |
詢價(jià) | ||
MICRON |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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