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MTD3055E

TMOSIVN-ChannelEnhancement-ModePowerFieldEffectTransistorDPAKforSurfaceorInsertionMount

TMOSPOWERFET8AMPERESRDS(on)=0.15OHM60VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055EL

TMOSIVPowerFieldEffectTransistor(N-ChannelEnhancement-ModeSiliconGate)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features 12A,60V.RDS(ON)=0.15?@VGS=10V Lowgatecharge. Fastswitchingspe

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTD3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055V

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD3055V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD3055V

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

MTD3055VL

M-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTD3055VL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour 50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD3055VL

PowerMOSFET12Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTD3055VL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTD3055VLG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTP3055

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3055

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MTP3055E

N-CHANNEL60V-0.1ohm-12ATO-220STripFETMOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MTP3055E

N-CHANNEL60V-0.1Q-12ATO-220STripFET??MOSFET

N-CHANNEL60V-0.1?-12ATO-220STripFET?MOSFET ■TYPICALRDS(on)=0.1? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MTP3055E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP3055EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP3055V

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MTP3055V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.15OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublest

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號：

    MT3055

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
仙童
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
NEXPERIA/安世
23+
SOT1215
69820
終端可以免費供樣,支持BOM配單!
 詢價
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費提供樣品
 詢價
FAIRCHILD/仙童
23+
TO-220
12501
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD/仙童
23+
TO-220
6000
原裝正品，支持實單
 詢價
FAIRCHILD/仙童
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FAIRCHILD
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
MT茂鈿
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
MT茂鈿
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多MT3055供應商 更新時間2025-1-4 8:00:00

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