MT47H64M16JN-3AT中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks

MT47H128M8 – 16 Meg x 8 x 8 banks

MT47H64M16 – 8 Meg x 16 x 8 banks

Features

? VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

? JEDEC-standard 1.8V I/O (SSTL_18-compatible)

? Differential data strobe (DQS, DQS#) option

? 4n-bit prefetch architecture

? Duplicate output strobe (RDQS) option for x8

? DLL to align DQ and DQS transitions with CK

? 8 internal banks for concurrent operation

? Programmable CAS latency (CL)

? Posted CAS additive latency (AL)

? WRITE latency = READ latency - 1 tCK

? Selectable burst lengths (BL): 4 or 8

? Adjustable data-output drive strength

? 64ms, 8192-cycle refresh

? On-die termination (ODT)

? Industrial temperature (IT) option

? Automotive temperature (AT) option

? RoHS-compliant

? Supports JEDEC clock jitter specification