| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT48 | PATCHBAYS | SWITCH Switch Publishing Co.，Ltd. | SWITCH | |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
MOBILE SDRAM GENERALDESCRIPTION The256MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456bits.ItisinternallyconfiguredasaquadbankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex16’s67,108,8 | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron |
詳細參數(shù)
- 型號：
MT48
- 制造商：
SWITCH
- 制造商全稱：
Switchcraft, Inc.
- 功能描述：
PATCHBAYS
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MICRON |
1504+ |
TSOP-54 |
10000 |
原廠直銷 |
詢價 | ||
MICRON |
23+ |
TSSOP |
2500 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
MICRON |
17+ |
0 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
MICRON |
TSOP54 |
6688 |
10 |
現(xiàn)貨庫存 |
詢價 | ||
MICRON |
22+23+ |
BGA |
37627 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
MICRON |
23+ |
TSOP54 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
MICRON |
23+ |
TSOP50 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
MICRON |
22+ |
BGA |
200000 |
原裝正品現(xiàn)貨,可開13點稅 |
詢價 | ||
MICRON |
0028+ |
TSOP-54 |
6000 |
絕對原裝自己現(xiàn)貨 |
詢價 | ||
MT |
03+ |
TSOP54 |
190 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 |
相關規(guī)格書
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