| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT48 | PATCHBAYS | SWITCH Switch Publishing Co.，Ltd. | SWITCH | |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
MOBILE SDRAM GENERALDESCRIPTION The256MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456bits.ItisinternallyconfiguredasaquadbankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex16’s67,108,8 | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron | ||
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe | MicronMicron Technology 鎂光美國(guó)鎂光科技有限公司 | Micron |
詳細(xì)參數(shù)
- 型號(hào)：
MT48
- 制造商：
SWITCH
- 制造商全稱：
Switchcraft, Inc.
- 功能描述：
PATCHBAYS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICRON |
1725+ |
? |
11520 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
MICRON/美光 |
2020+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
MICRON |
13+ |
1260 |
原裝分銷 |
詢價(jià) | |||
MICRON/美光 |
21+ |
BGA |
20000 |
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅 |
詢價(jià) | ||
MICRON |
23+ |
TSSOP |
2500 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
MICRON |
2019+/2020+ |
TSOP54 |
15000 |
原裝正品現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
MICRON |
23+ |
TSOP |
10000 |
公司只做原裝,假一罰十 |
詢價(jià) | ||
MICRON/美光 |
04+ |
TSOP-54 |
18 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
MICRON |
23+24 |
TSOP |
9680 |
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
MICRON |
2022+ |
BGA |
45000 |
我司100%原裝正品現(xiàn)貨,現(xiàn)貨眾多歡迎加微信 |
詢價(jià) |
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