MT48LC1M16A1TGSIT中文資料鎂光數(shù)據(jù)手冊(cè)PDF規(guī)格書

GENERAL DESCRIPTION

The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit banks is organized as 2,048 rows by 256 columns by 16 bits.

FEATURES

? PC100 functionality

? Fully synchronous; all signals registered on

positive edge of system clock

? Internal pipelined operation; column address can

be changed every clock cycle

? Internal banks for hiding row access/precharge

1 Meg x 16 - 512K x 16 x 2 banks architecture with

11 row, 8 column addresses per bank

? Programmable burst lengths: 1, 2, 4, 8 or full page

? Auto Precharge Mode, includes CONCURRENT

AUTO PRECHARGE

? Self Refresh and Adaptable Auto Refresh Modes

- 32ms, 2,048-cycle refresh or

- 64ms, 2,048-cycle refresh or

- 64ms, 4,096-cycle refresh

? LVTTL-compatible inputs and outputs

? Single +3.3V ±0.3V power supply

? Supports CAS latency of 1, 2 and 3

? Industrial temperature range: -40°C to +85°C