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MT4LC4M16R6TG-5S中文資料鎂光數(shù)據(jù)手冊PDF規(guī)格書

MT4LC4M16R6TG-5S
廠商型號

MT4LC4M16R6TG-5S

功能描述

DRAM

文件大小

474.53 Kbytes

頁面數(shù)量

24

生產(chǎn)廠商 Micron Technology
企業(yè)簡稱

Micron鎂光

中文名稱

美國鎂光科技有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-22 15:14:00

MT4LC4M16R6TG-5S規(guī)格書詳情

GENERAL DESCRIPTION

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MT4LC4M16R6 or 8,192 rows by 512 columns on the MT4LC4M16N3.

FEATURES

? Single +3.3V ±0.3V power supply

? Industry-standard x16 pinout, timing, functions, and package

? 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3)

? High-performance CMOS silicon-gate process

? All inputs, outputs and clocks are LVTTL-compatible

? Extended Data-Out (EDO) PAGE MODE access

? 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms

? Optional self refresh (S) for low-power data retention

產(chǎn)品屬性

  • 型號:

    MT4LC4M16R6TG-5S

  • 制造商:

    MICRON

  • 制造商全稱:

    Micron Technology

  • 功能描述:

    DRAM

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18+
TSOP
85600
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MICRON
2020+
TSOP-50
80000
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2020+
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4500
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MICRON
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398
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micron
24+
N/A
6980
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MICRON
TSOP-50
699839
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MT
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800
詢價