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MTB23P06V

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB23P06V

TMOS POWER FET 23 AMPERES 60 VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06V

P??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB23P06V

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTB23P06VT4

P??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06

TMOSPOWERFET23AMPERES60VOLTS

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB23P06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB23P06E

TMOSPOWERFET23AMPERES60VOLTS

TMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount P-ChannelEnhancement-ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponents

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP23P06V

TMOSPOWERFET23AMPERES60VOLTSRDS(on)=0.120OHM

TMOSV?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP23P06V

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP23P06VG

PowerMOSFET23Amps,60Volts

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP23P06VG

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    MTB23P06V

  • 制造商：

    ON Semiconductor

  • 功能描述：

    Trans MOSFET P-CH 60V 23A 3-Pin(2+Tab) D2PAK Rail

供應商型號品牌批號封裝庫存備注價格
ONS
24+
D2PAK
4000
原裝原廠代理 可免費送樣品
 詢價
ON/安森美
2405+
TO-263
4475
只做原裝正品渠道訂貨
 詢價
ON/安森美
24+
TO-263
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
ON/ON
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
ON
23+
TO-263
6893
詢價
ON
24+
TO-263
48
詢價
ON
24+
D2PAK
6000
進口原裝正品假一賠十,貨期7-10天
 詢價
ON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ONS
22+23+
D2PAK
24564
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ON
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
更多MTB23P06V供應商 更新時間2025-1-1 15:08:00

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