訂購數(shù)量 | 價格 |
---|---|
1+ |
首頁>MTB30P06VT4G>詳情
MTB30P06VT4G_ONSEMI/安森美半導體_MOSFET PFET D2PAK 60V 30A 80mOhm華來深電子
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
MTB30P06VT4G
- 功能描述:
MOSFET PFET D2PAK 60V 30A 80mOhm
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商
- 企業(yè):
深圳市華來深電子有限公司
- 商鋪:
- 聯(lián)系人:
朱先生
- 手機:
13751106682
- 詢價:
- 電話:
0755-83238902/13662247350
- 傳真:
0755-83972189
- 地址:
深圳市福田區(qū)上步工業(yè)區(qū)205棟4樓4B35/門市部:深圳市福田區(qū)華強北路國利大廈新亞洲二期N2B227
相近型號
- MTB30P06KQ8
- MTB30P06KJ3
- MTB33N10ET4
- MTB30P06KFP
- MTB33N10E-T4
- MTB30P06J3
- MTB33N10ET4G
- MTB30P06
- MTB340N11N6
- MTB30N20
- MTB340N11N6-T1-G
- MTB30N06VLT4G
- MTB35N04J3
- MTB30N06VLT4
- MTB35N04V8
- MTB30N06VLG
- MTB35N06ZL
- MTB30N06VL
- MTB36N06
- MTB30N06V8
- MTB36N06E
- MTB30N06V
- MTB36N06ET4G
- MTB30N06Q8-0-T3-G
- MTB36N06V
- MTB30N06Q8
- MTB30N06L
- MTB36N06VT4
- MTB30N06J3
- MTB36N06VT4G
- MTB30N06F3
- MTB370N10KL3
- MTB30N06ELT4
- MTB370N10KL3-0-T3-G
- MTB30N06EL
- MTB3D0N03ATH8
- MTB30N06E
- MTB3D0N03BE3
- MTB3055VL
- MTB3D0N03BH8
- MTB3055L-T4
- MTB3D0N03BJ3
- MTB3055
- MTB3D0N03BQ8
- MTB-301L
- MTB3D0N04H8
- MTB300P10QL3-0-T3-G
- MTB3D0N04J3
- MTB300P10QL3
- MTB3D0P03H8