MTB33N10E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTB33N10E規(guī)格書詳情
TMOS E-FET? High Energy Power FET
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS
This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Capability Specified at Elevated Temperature
? Low Stored Gate Charge for Efficient Switching
? Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
? Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
產(chǎn)品屬性
- 型號：
MTB33N10E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
ON/安森美 |
23+ |
N/A |
10000 |
原裝進(jìn)口只做訂貨 尋找優(yōu)勢渠道合作 |
詢價 | ||
ON/安森美 |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
ON |
23+ |
TO-263 |
6893 |
詢價 | |||
MOT |
22+23+ |
TO263 |
76071 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
ON/安森美 |
01+ |
TO-263 |
711 |
詢價 | |||
MOTOROLA |
TO263 |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
MOTOROLA/摩托羅拉 |
24+ |
TO263 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
22+ |
TO-263 |
3000 |
原裝正品,支持實(shí)單 |
詢價 | ||
MOT |
TO263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 |
