MTB3N120E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTB3N120E規(guī)格書詳情
TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FETis designedto withstand high energy in the avalanche and commutation modes. This new energyefficient design also offers a
drain–to–sourcediode witha fast recovery time. Designed for low voltage,high speedswitching applications in power supplies, convertersand PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating safeoperating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Capability Specified at Elevated Temperature
? Low Stored Gate Charge for Efficient Switching
? Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor
Absorbs High Energy in the Avalanche Mode
? Source–to–Drain Diode Recovery time Comparable to Discrete Fast Recovery Diode
產(chǎn)品屬性
- 型號：
MTB3N120E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK Rail
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
22+ |
TO-263 |
3000 |
原裝正品,支持實單 |
詢價 | ||
ON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ON |
TO-263 |
699839 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ON |
新 |
86 |
全新原裝 貨期兩周 |
詢價 | |||
ON |
23+ |
TO-263 |
170 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ON |
23+ |
TO-263 |
6893 |
詢價 | |||
ON |
24+ |
30000 |
詢價 | ||||
ON(安森美) |
23+ |
標準封裝 |
5000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
TI |
24+ |
SOIC-16 |
4352 |
詢價 | |||
全宇昕 |
2022+ |
TO-220 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 |
