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MTB50P03HDL規(guī)格書詳情
HDTMOS E-FET? High Energy Power FET D2PAK for Surface Mount
P-channel Enhancement-Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on)capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Short Heatsink Tab Manufactured — Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
? Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
產(chǎn)品屬性
- 型號：
MTB50P03HDL
- 功能描述：
MOSFET 30V 50A Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO-263 |
39500 |
進(jìn)口原裝現(xiàn)貨 支持實單價優(yōu) |
詢價 | ||
ON/安森美 |
20+ |
D2PAK |
32500 |
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝 |
詢價 | ||
ON/安森美 |
2021+ |
SOT263 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON/安森美 |
24+ |
D2PAK |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
ON/安森美 |
22+ |
SOT263 |
21000 |
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。 |
詢價 | ||
ON/安森美 |
2022+ |
D2PAK |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
ON/安森美 |
22+ |
SOT-263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
ON/安森美 |
23+ |
TO-263 |
10000 |
公司只做原裝正品 |
詢價 | ||
ON/安森美 |
24+ |
SOT263 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON/安森美 |
22+ |
TO-263 |
16372 |
原裝正品現(xiàn)貨,可開13點稅 |
詢價 |
