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MTB50P03HDL規(guī)格書詳情
HDTMOS E-FET? High Energy Power FET D2PAK for Surface Mount
P-channel Enhancement-Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on)capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Short Heatsink Tab Manufactured — Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
? Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
產(chǎn)品屬性
- 型號:
MTB50P03HDL
- 功能描述:
MOSFET 30V 50A Logic Level
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ON(安森美) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
ON/安森美 |
24+ |
SOT263 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ON |
24+ |
TO-263 |
20000 |
全新原廠原裝,進口正品現(xiàn)貨,正規(guī)渠道可含稅!! |
詢價 | ||
ON |
17+ |
TO-263 |
4000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON/安森美 |
22+ |
SOT263 |
9000 |
原裝正品 |
詢價 | ||
ON(安森美) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 | ||
ON |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
ON |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
TO-251 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 |