MTB6N60E1中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTB6N60E1規(guī)格書詳情
TMOS E-FET? High Energy Power FET D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Short Heatsink Tab Manufactured — Not Sheared
? Specially Designed Leadframe for Maximum Power Dissipation
產(chǎn)品屬性
- 型號(hào)：
MTB6N60E1
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA/ |
5145 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢價(jià) | ||
ON |
2020+ |
SOT-263 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
MOT |
TO-262 |
6009 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
NS |
23+ |
NA |
586 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
MOT |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
ON |
23+ |
TO-263 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售! |
詢價(jià) | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
ON |
24+ |
TO-263 |
35000 |
詢價(jià) | |||
MOT |
24+ |
TO-262 |
3803 |
只做原裝進(jìn)口!正品支持實(shí)單! |
詢價(jià) |
