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MTD1N40E

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

1N40

1Amps,400VoltsN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

1N40

Highsurgecurrentcapability

TGS

Tiger Electronic Co.,Ltd

1N40

1A,400VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

1N40A

N-CHANNELENHANCEMENT

UTCUnisonic Technologies

友順友順科技股份有限公司

MTD1N40

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N40D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD1N40I

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHX1N40

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpackplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitched

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX1N40E

PowerMOStransistorIsolatedversionofPHP2N40E

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

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ON
23+
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11846
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2020+
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80000
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30000
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20000
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23+
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10000
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O
22+
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6000
十年配單,只做原裝
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NA
15238
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O
23+
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6000
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TO-252
399000
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O
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25000
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更多MTD1N40E供應(yīng)商 更新時間2025-1-2 14:05:00