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MTD20N03HDL規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Available in Insertion Mount, Add –1 or 1 to Part Number
產(chǎn)品屬性
- 型號(hào):
MTD20N03HDL
- 制造商:
ON Semiconductor
- 功能描述:
Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK Rail
- 功能描述:
MOSFET N LOGIC D-PAK
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MOT |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
ON/安森美 |
22+ |
SOT252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
04+ |
TO263 |
2255 |
全新原裝進(jìn)口自己庫存優(yōu)勢(shì) |
詢價(jià) | |||
ON/安森美 |
24+ |
TO-252 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
VBsemi |
2233+ |
TO252 |
2983 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
ON/安森美 |
2022+ |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | |||
FREESCALE |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ON/安森美 |
22+ |
SOT |
50000 |
只做正品原裝,假一罰十,歡迎咨詢 |
詢價(jià) | ||
ONSEMI/安森美 |
23+ |
TO252 |
6850 |
只做原廠原裝正品現(xiàn)貨!假一賠十! |
詢價(jià) | ||
ON |
2020+ |
TO252 |
350000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價(jià) |