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MTD20N03HDL中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTD20N03HDL
廠商型號(hào)

MTD20N03HDL

功能描述

TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM

文件大小

250.81 Kbytes

頁面數(shù)量

12

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡(jiǎn)稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 22:50:00

MTD20N03HDL規(guī)格書詳情

HDTMOS E-FET? Power Field Effect Transistor

DPAK for Surface Mount

N-Channel Enhancement-Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSSand VDS(on)Specified at Elevated Temperature

? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

? Available in Insertion Mount, Add –1 or 1 to Part Number

產(chǎn)品屬性

  • 型號(hào):

    MTD20N03HDL

  • 制造商:

    ON Semiconductor

  • 功能描述:

    Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) DPAK Rail

  • 功能描述:

    MOSFET N LOGIC D-PAK

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