MTE30N50E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
MTE30N50E規(guī)格書(shū)詳情
ISOTOP TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
? 2500 V RMS Isolated ISOTOP Package
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? Very Low Internal Parasitic Inductance
? IDSS and VDS(on) Specified at Elevated Temperature
? U.L. Recognized, File #E69369
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ON |
22+ |
SOT227 |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
on |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
ON |
24+ |
30000 |
詢價(jià) | ||||
ON |
24+ |
SOT227 |
28500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售 |
詢價(jià) | ||
進(jìn)口原裝 |
23+ |
SMD |
26749 |
全新原裝現(xiàn)貨,專業(yè)代理熱賣 |
詢價(jià) | ||
24+ |
N/A |
82000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Marktech |
1931+ |
N/A |
51 |
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詢價(jià) | ||
MARKTECH |
20+ |
光電元件 |
98 |
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詢價(jià) |