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MTP12N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP12N06

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP12N06EZL

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RFD12N06

60VN-ChannelMOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號:

    MTP12N06

  • 功能描述:

    12N06

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220
6893
詢價
24+
3250
詢價
MOT
05+
TO-220
3000
原裝進口
詢價
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價
ON
2020+
TO-220
35000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
FAIRCHILD/仙童
23+
TO-252(D
69820
終端可以免費供樣,支持BOM配單!
詢價
ON/安森美
23+
TO-220
10000
公司只做原裝正品
詢價
ON/安森美
2022+
TO-220
12888
原廠代理 終端免費提供樣品
詢價
MOTOROLA/摩托羅拉
23+
220
6000
原裝正品,支持實單
詢價
MOTOLA
23+
2800
正品原裝貨價格低
詢價
更多MTP12N06供應(yīng)商 更新時間2025-2-2 9:00:00