MTP1N100E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTP1N100E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP1N100E
- 制造商：
ON Semiconductor
- 功能描述：
Trans MOSFET N-CH 1KV 1A 3-Pin(3+Tab) TO-220 Rail
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
ON/安森美 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
TH/韓國(guó)太虹 |
2048+ |
TO-220 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
VB |
TO220AB |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ON(安森美) |
6000 |
詢價(jià) | |||||
ON |
24+ |
N/A |
2320 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON/安森美 |
22+ |
TO-220 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) |
