MTP2N60E中文資料Motorola數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTP2N60E規(guī)格書詳情
TMOS E-FET? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP2N60E
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
88298 |
詢價(jià) | |||
ON |
23+ |
TO-220 |
286 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON |
23+ |
TO-220 |
5800 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
MOTOROLA |
2023+ |
TO-220 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
ON |
2023+ |
TO-220 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價(jià) | ||
ON |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
ON |
1932+ |
TO-220 |
286 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
ST |
TO-220F |
93480 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) |
