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MTP52N06VL規(guī)格書詳情
TMOS V? Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM
TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour
50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.
New Features of TMOS V
? On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on)Technology
? Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
? Avalanche Energy Specified
? IDSSand VDS(on)Specified at Elevated Temperature
? Static Parameters are the Same for both TMOS V and TMOS E–FET
產(chǎn)品屬性
- 型號:
MTP52N06VL
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MOT |
589220 |
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詢價 | ||||
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58000 |
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詢價 | ||
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16800 |
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詢價 | ||
O |
23+ |
TO220AB |
10000 |
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詢價 | ||
ON/安森美 |
2022+ |
TO220 |
12888 |
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詢價 | ||
NXP/恩智浦 |
2324+ |
NA |
78920 |
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詢價 | ||
MOT |
24+ |
TO-220 |
12335 |
詢價 | |||
MOTOLA |
23+ |
2800 |
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詢價 | |||
JINGDAO/晶導微 |
23+ |
SOD-123FL |
69820 |
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詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 |