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MTP60N05HDL中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書

MTP60N05HDL
廠商型號

MTP60N05HDL

功能描述

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

文件大小

166.09 Kbytes

頁面數(shù)量

8

生產廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網

原廠標識
數(shù)據(jù)手冊

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更新時間

2025-1-20 11:58:00

MTP60N05HDL規(guī)格書詳情

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

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