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MTP75N03HDL中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書

MTP75N03HDL
廠商型號(hào)

MTP75N03HDL

功能描述

TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS

文件大小

235.54 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Motorola, Inc
企業(yè)簡稱

Motorola摩托羅拉

中文名稱

加爾文制造公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-4-29 19:03:00

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MTP75N03HDL規(guī)格書詳情

HDTMOS E-FET High Density Power FET

N–Channel Enhancement–Mode Silicon Gate

This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

? Ultra Low RDS(on), High–Cell Density, HDTMOS

? SPICE Parameters Available

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

? Avalanche Energy Specified

產(chǎn)品屬性

  • 型號(hào):

    MTP75N03HDL

  • 制造商:

    ON Semiconductor

  • 制造商:

    ON Semiconductor

  • 功能描述:

    MOSFET Transistor, N-Channel, TO-220AB

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ON
21+
TO220
10026
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ON
05+
原廠原裝
30001
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MOT
23+
TO-220
10000
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MOT
0001-
50
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ON
24+
原廠封裝
65250
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ON
23+
TO220
10026
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MOT
17+
TO-220
6200
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24+
N/A
5000
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MOT/ON
23+
TO
15500
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ON
23+
TO-220
6893
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