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MTP75N03HDL規(guī)格書詳情
HDTMOS E-FET High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Ultra Low RDS(on), High–Cell Density, HDTMOS
? SPICE Parameters Available
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Avalanche Energy Specified
產(chǎn)品屬性
- 型號：
MTP75N03HDL
- 制造商：
ON Semiconductor
- 制造商：
ON Semiconductor
- 功能描述：
MOSFET Transistor, N-Channel, TO-220AB
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VBSEMI/微碧半導(dǎo)體 |
23+ |
TO220 |
10000 |
臺積電晶圓長電封裝微碧原裝可長久供應(yīng) |
詢價 | ||
ON |
23+ |
TO-220 |
6893 |
詢價 | |||
ON |
2020+ |
TO-220 |
35000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
MOT |
17+ |
TO-220 |
6200 |
詢價 | |||
ONSEMICONDU |
24+ |
原封裝 |
1580 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
ON |
2023+ |
TO220 |
8800 |
正品渠道現(xiàn)貨 終端可提供BOM表配單。 |
詢價 | ||
ON/安森美 |
22+ |
TO-220 |
18336 |
詢價 | |||
ON |
21+ |
TO220 |
10026 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
MOT |
23+ |
TO-220 |
10000 |
專做原裝正品,假一罰百! |
詢價 | ||
MOT |
0001- |
50 |
公司優(yōu)勢庫存 熱賣中! |
詢價 |
