MTP9N25E中文資料摩托羅拉數(shù)據(jù)手冊(cè)PDF規(guī)格書
MTP9N25E規(guī)格書詳情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
MTP9N25E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6893 |
詢價(jià) | |||
ON/安森美 |
24+ |
TO220 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) | ||
MELLANOX TECHNOLOGIES |
15+ |
12 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | |||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
ON |
24+ |
N/A |
7000 |
詢價(jià) | |||
ON/安森美 |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
ON/安森美 |
2022+ |
TO220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
37850 |
23+ |
10 |
15523 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
