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MTW10N100E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N?Channel Enhancement?Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transient.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247 |
6893 |
詢價(jià) | |||
ON |
23+ |
TO-247 |
560 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON |
TO247 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ON/安森美 |
2022 |
TO247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
16+ |
MODULE |
2100 |
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨 |
詢價(jià) | |||
MOTOROLA |
9628 |
12 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中! |
詢價(jià) | |||
MOTOROLA |
24+ |
模塊 |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
NXP/恩智浦 |
2324+ |
NA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價(jià) | ||
MOTORALA |
23+ |
TO-247 |
2508 |
原廠原裝正品 |
詢價(jià) | ||
24+ |
2810 |
詢價(jià) |
