MTW6N100中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTW6N100規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
產(chǎn)品屬性
- 型號：
MTW6N100
- 制造商：
MOTOROLA
- 制造商全稱：
Motorola, Inc
- 功能描述：
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
24+ |
To3p |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
ON/安森美 |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FRE |
24+ |
TO |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
ON |
23+ |
TO-247 |
6893 |
詢價 | |||
MOT |
22+23+ |
TO-3P |
41672 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
ON |
2023+ |
TO-247 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
MOTOROLA |
TO3P |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
MOT |
24+ |
TO-3P |
35200 |
一級代理分銷/放心采購 |
詢價 | ||
MOTOROLA/摩托羅拉 |
2022 |
TO3P |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
MOT |
06+ |
TO-247 |
2500 |
原裝庫存 |
詢價 |
