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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MTZJ6.8D	文件：34.34 Kbytes Page：2 Pages	MTZJ SERIES ZENER DIODES MTZJSERIESZENERDIODES	LRCLeshan Radio Company 樂山無線電樂山無線電股份有限公司	LRC
MTZJ6.8D	文件：613.51 Kbytes Page：3 Pages	Axial Lead Zener Diodes Features: Highreliability Verysharpreversecharacteristic Lowreversecurrentlevel Applications: VoltageStabilization MechanicalData: Case:DO-34GlassCase Weight:Approx0.09gram	WEITRON Weitron Technology	WEITRON
NNCD6.8A	文件：47.71 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES400mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(400mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8B	文件：43.83 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES500mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(500mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV. FEATURES	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8C	文件：41.95 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES150mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(150mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8D	文件：41.63 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8DA	文件：227.15 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODE2-PINSUPERMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODE 2-PINSUPERMINIMOLD DESCRIPTION TheseproductsarethediodedevelopedforESD(ElectrostaticDischarge)noiseprotection.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingits	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NNCD6.8E	文件：40.02 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES200mWTYPE ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(200mWTYPE) ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofnolessthan30kV,thusmakingits	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8F	文件：40.17 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODESDOUBLETYPE,ANODECOMMON3PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(DOUBLETYPE,ANODECOMMON) 3PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceofno	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8G	文件：41.98 Kbytes Page：8 Pages	ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5PINMINIMOLD ELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE) 5PINMINIMOLD ThisproductseriesisadiodedevelopedforE.S.D(ElectrostaticDischarge)noiseprotection.BasedontheIEC1000-4-2testonelectromagneticinterference(EMI),thediodeassuresanenduranceof	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8H	文件：40.88 Kbytes Page：5 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION ThisproductseriesisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinter	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8J	文件：113.87 Kbytes Page：5 Pages	ESDNOISECLIPPINGDIODE DESCRIPTION TheseproductsareadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresanendurance,thusmakingitselfmostsuitableforexternalinterfacecircuitprotection.Theseproductsareca	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8LG	文件：49.3 Kbytes Page：8 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8LH	文件：49.45 Kbytes Page：8 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8MG	文件：35.49 Kbytes Page：4 Pages	LOWCAPACITANCEHIGHESDTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODES5-PINMINIMOLD	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8PG	文件：36.04 Kbytes Page：6 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINMINIMOLD LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD DESCRIPTION TheNNCD6.8PGisadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediodeassuresane	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8PH	文件：39.84 Kbytes Page：6 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINSUPERSMALLMINIMOLD LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION TheNNCD6.8PHisadiodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC-61000-4-2testonelectromagneticinterference(EMI),thediode	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8PL	文件：38.95 Kbytes Page：5 Pages	5-PINSUPERSMALLMINIMOLDFLATLEADTYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUADTYPE:COMMONANODE 5-PINSUPERSMALLMINIMOLD(FLATLEADTYPE)ELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUADTYPE:COMMONANODE) DESCRIPTION TheNNCD6.8PLisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterference(EM	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8RG	文件：46.02 Kbytes Page：6 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODEQUARTOTYPE:COMMONANODE5-PINMINIMOLD LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINMINIMOLD DESCRIPTION TheNNCD6.8RGisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterference(EMI),th	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC
NNCD6.8RH	文件：48.94 Kbytes Page：6 Pages	LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD LOWCAPACITANCETYPEELECTROSTATICDISCHARGENOISECLIPPINGDIODE(QUARTOTYPE:COMMONANODE)5-PINSUPERSMALLMINIMOLD DESCRIPTION TheNNCD6.8RHisalowcapacitancetypediodedevelopedforESD(ElectrostaticDischarge)absorption.BasedontheIEC61000-4-2testonelectromagneticinterferen	NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社	NEC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	MTZJ6.8D	LRC	23+	NA	25060	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
北京天陽誠業(yè)科貿(mào)有限公司	MTZJ6V2A	ST(先科)	23+	NA	16	穩(wěn)壓二極管	詢價(jià)
深圳市科雨電子有限公司	MTZJ6V2SAR0G	TAIWAN	1809+	DO-34	16750	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市振芯物聯(lián)科技有限公司	MTZJ6V8A	TSC	22+	DO-34	28600	只做原裝正品現(xiàn)貨假一賠十一級(jí)代理	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	MTZJ6V8A	TSC/臺(tái)灣半導(dǎo)體	23+	DO-34	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	MTZJ6V8A	TSC/臺(tái)灣半導(dǎo)體	2022	DO-34	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市君億電子科技有限公司	MTZJ6V8A	TSC	21+	DO-34	12800	只有原裝 ,可支持實(shí)單	詢價(jià)
深圳市威雅利發(fā)展有限公司	MTZJ6V8A	TSC	18+	DO-34	9980	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	MTZJ6V8A	TSC		DO-34	9980	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市科翼源電子有限公司	MTZJ6V8A	TSC	23+	DO-34	12480	原廠原裝正品	詢價(jià)

更多MTZJ6.8D供應(yīng)商更新時(shí)間2024-11-18 13:47:00

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