MWS11中文資料美高森美數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz.

This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite? package, with significantly smaller footprint for applications where board space is at a premium.

KEY FEATURES

? Advanced InGaP HBT

? DC to 6GHz

? Single +5V Supply

? Small Signal Gain = 16dB

? P1dB = 19dBm (5V), f=1GHz

? SOT-89 3-Pin, & Gigamite Packages

APPLICATIONS/BENEFITS

? Broadband Gain Blocks

? IF or RF buffer Amplifiers

? Driver Stage for Power Amps

? Final Power Amp for Low to Medium Power Applications

? Broadband Test Equipment