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N04L163WC1A

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB1

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB1-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AB-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT2

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT2-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1AT-70I

4Mb Ultra-Low Power Asynchronous CMOS SRAM

Overview TheN04L163WC1Aisanintegratedmemorydevicecontaininga4MbitStaticRandomAccessMemoryorganizedas262,144wordsby16bits.ThedeviceisdesignedandfabricatedusingNanoAmp’sadvancedCMOStechnologytoprovidebothhigh-speedperformanceandultra-lowpower. Features

NANOAMP

NanoAmp Solutions, Inc.

N04L163WC1C

4MbUltra-LowPowerAsynchronousCMOSSRAM

Features ?SingleWidePowerSupplyRange 2.2to3.6Volts ?Verylowstandbycurrent 2.0μAat3.0V(Typical) ?Verylowoperatingcurrent 1.5mAat3.0Vand1μs(Typical)

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詳細參數(shù)

  • 型號:

    N04L163WC1A

  • 制造商:

    NANOAMP

  • 制造商全稱:

    NANOAMP

  • 功能描述:

    4Mb Ultra-Low Power Asynchronous CMOS SRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
SOLUTIONS
24+
TSOP
5000
只做原裝公司現(xiàn)貨
詢價
SOLUTIO
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
AM
6000
面議
19
DIP/SMD
詢價
SOLUTIONS
22+
TSOP
28600
只做原裝正品現(xiàn)貨假一賠十一級代理
詢價
SOLUTIONS
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
SOLUTIONS
21+
TSOP
10000
原裝現(xiàn)貨假一罰十
詢價
SOLUTIONS
2022
TSOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
AMISNANOAMPSOLUTIO
21+
TSOP44
13880
公司只售原裝,支持實單
詢價
SOLUTIONS
TSOP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
SOLUTIONS
22+
TSOP
3000
原裝正品,支持實單
詢價
更多N04L163WC1A供應(yīng)商 更新時間2024-11-6 10:20:00