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N08L1618C2AB中文資料NANOAMP數(shù)據(jù)手冊PDF規(guī)格書

N08L1618C2AB
廠商型號

N08L1618C2AB

功能描述

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit

文件大小

251.89 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 NanoAmp Solutions, Inc.
企業(yè)簡稱

NANOAMP

中文名稱

NanoAmp Solutions, Inc.官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-25 20:00:00

N08L1618C2AB規(guī)格書詳情

Overview

The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low power.

Features

? Single Wide Power Supply Range

1.65 to 2.2 Volts

? Very low standby current

0.5μA at 1.8V (Typical)

? Very low operating current

1.0mA at 1.8V and 1μs (Typical)

? Very low Page Mode operating current

0.5mA at 1.8V and 1μs (Typical)

? Simple memory control

Dual Chip Enables (CE1and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

? Low voltage data retention

Vcc = 1.2V

? Very fast output enable access time

25ns OEaccess time

? Very fast Page Mode access time

tAAP = 25ns

? Automatic power down to standby mode

? TTL compatible three-state output driver

產(chǎn)品屬性

  • 型號:

    N08L1618C2AB

  • 制造商:

    NANOAMP

  • 制造商全稱:

    NANOAMP

  • 功能描述:

    8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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24+
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onsemi
23+/24+
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