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N32T1630C1CZ中文資料NANOAMP數(shù)據(jù)手冊PDF規(guī)格書
N32T1630C1CZ規(guī)格書詳情
Overview
The N32T1630C1C is an integrated memory device containing a 32 Mbit SRAM built using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. It is designed to be identical in operation and interface to standard 6T SRAMS.
Features
? Dual voltage for Optimum Performance:
VccQ - 2.7 to 3.6 Volts
Vcc - 2.7 to 3.6 Volts (Vcc ≤ VccQ)
? Fast random access time
70ns at 2.7V
? Very fast page mode access time
25ns page cycle and access
? Very low standby current
80μA V (Typical)
? Very low operating current
1.0mA at 1μs (Typical)
? Simple memory control
Byte control for independent byte operation
Output Enable (OE) for memory expansion
? Automatic power down to standby mode
? PAR and RMS power saving modes
? Deep sleep option
? TTL compatible three-state output driver
產(chǎn)品屬性
- 型號：
N32T1630C1CZ
- 制造商：
NANOAMP
- 制造商全稱：
NANOAMP
- 功能描述：
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
alpha/skywor |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
NANOAMPSO |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
AgilentTechnologiesTestE |
新 |
11 |
全新原裝 貨期兩周 |
詢價 | |||
PHI |
17+ |
SOT-143 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
NANOAMPSOLUTIONS |
23+ |
BGA |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
國民技術(shù) |
23+熱賣 |
QFN32 |
20000 |
原裝正品，假一罰十 |
詢價 | ||
ATC |
23+ |
NA/ |
4000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
Nations(國民技術(shù)) |
23+ |
QFN32 |
7350 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
PHI |
22+ |
SOT-143 |
25000 |
只有原裝原裝,支持BOM配單 |
詢價 | ||
NANOAMPSO |
24+ |
BGA |
35200 |
一級代理/放心采購 |
詢價 |
