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N4906B

N4906B Serial BERT

KEYSIGHTKeysight Technologies

是德科技是德科技（中國(guó)）有限公司

NTD4906N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=54A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NTD4906N

PowerMOSFET30V,54A,SingleN??hannel,DPAK/IPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTE4906

SurgeClamping,TransientOvervoltageSuppressorUnidirectional

Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime

NTE

NTE Electronics

PCA4906

ConverterforConnecting42-pinRSSEmulatorMCUto32-pin1.778mm-pitchSDIP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PE4906

75OhmSMCJackBulkheadConnectorClamp-SolderAttachmentForRG179,RG187

PASTERNACK

Pasternack Enterprises, Inc.

RN4906

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuit. AndDriverCircuitApplications. ?IncludeingtwodevicesinUS6(ultrasuperminitypewith6leads) ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN4906FE

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications. ?TwodevicesareincorporatedintoanExtreme-Super-Mini(6pin)package. ?Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofevermore

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

S4906WB

5GHzbroadbandWLAN

LSTD

Laird Tech Smart Technology

SI4906DY

DualN-Channel40-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4906DY

DualN-Channel40-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?CCFLInverter

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SPN4906

DualN-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

SPN4906

N-ChannelEnhancementModeMOSFET

SYNC-POWERSYNC POWER Crop.

擎力科技擎力科技股份有限公司

TGA4906

4WattKa-BandHPA

TriQuint

TriQuint Semiconductor

TGA4906-SM

4WattKa-BandPowerAmplifier

TriQuint

TriQuint Semiconductor

TGA4906-SM

4WattKa-BandPackagedHPA

TriQuint

TriQuint Semiconductor

TLE4906H

HighPrecisionHall-EffectSwitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TLE4906H

HighPrecisionHall-EffectSwitch

FunctionalDescription TheTLE4906HandtheTLE4906LareintegratedcircuitHall-effectsensorsdesignedspecificallyforhighlyaccurateapplications. Precisemagneticswitchingpointsandhightemperaturestabilityareachievedbyactivecompensationcircuitsandchoppertechniquesonchip. F

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TLE4906K

HighPrecisionHallEffectSwitch

Overview TheTLE4906isahighprecisionHalleffectswitchwithhighlyaccurateswitchingthresholdsforoperatingtemperaturesupto150°C. Features ?2.7Vto24Vsupplyvoltage ?Operationfromunregulatedpowersupply ?Highsensitivityandhighstabilityofthemagneticsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TLE4906L

HighPrecisionHall-EffectSwitch

FunctionalDescription TheTLE4906HandtheTLE4906LareintegratedcircuitHall-effectsensorsdesignedspecificallyforhighlyaccurateapplications. Precisemagneticswitchingpointsandhightemperaturestabilityareachievedbyactivecompensationcircuitsandchoppertechniquesonchip. F

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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專業(yè)模塊
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8513
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24+
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2100
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23+
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20000
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55
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2022+
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570
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更多N4906供應(yīng)商 更新時(shí)間2025-1-18 15:14:00

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