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NAND01GW3B2BN6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2BN6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

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NAND01GW3B2BN6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GW3B2BN6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

NAND01GW3B2BN6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2BN6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

NAND01GW3B2BN6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    NAND01GW3B2BN6F

  • 功能描述:

    閃存 1 Gbit 2 Gbit 2112 byte 1.8V

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 數(shù)據(jù)總線寬度:

    1 bit

  • 存儲類型:

    Flash

  • 存儲容量:

    2 MB

  • 結(jié)構(gòu):

    256 K x 8

  • 接口類型:

    SPI

  • 電源電壓-最大:

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流:

    15 mA

  • 工作溫度:

    - 40 C to + 85 C

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝:

    Reel

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ST
17+
TSOP48
6200
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NUMONYX
12+
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2103
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ST
23+
TSOP48
20000
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Numonyx
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STMicro
2023+
TSOP48
80000
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ST
24+
TSOP48
35400
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23+
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50000
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ST/意法
22+
TSOP48
9000
原裝正品
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NAND01GW3B2BN6F
2734
2734
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Numonyx
22+
NA
30000
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更多NAND01GW3B2BN6F供應(yīng)商 更新時間2025-1-5 8:30:00