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NAND01GW3B2BZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2BZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

NAND01GW3B2BZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

NUMONYX

numonyx

NAND01GW3B2BZA6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

NAND01GW3B2BZA6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYX

numonyx

NAND01GW3B2BZA6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

NUMONYX

numonyx

NAND01GW3B2BZA6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數

  • 型號:

    NAND01GW3B2BZA6F

  • 制造商:

    Micron Technology Inc

  • 功能描述:

    Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 63-Pin VFBGA T/R

供應商型號品牌批號封裝庫存備注價格
MICRON
BGA
9856
只做原裝貨值得信賴
詢價
MICRON
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
MICRON
23+
BGA
8560
受權代理!全新原裝現貨特價熱賣!
詢價
MICRON
1140+
BGA
13486
只做原廠原裝,認準寶芯創(chuàng)配單專家
詢價
MICRON
1902+
BGA
2734
代理品牌
詢價
MICRON
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
MICRON/美光
23+
BGA
50000
全新原裝正品現貨,支持訂貨
詢價
MICRON
21+
BGA
10000
原裝現貨假一罰十
詢價
MICRON/美光
2022
BGA
80000
原裝現貨,OEM渠道,歡迎咨詢
詢價
MICRON/美光
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
更多NAND01GW3B2BZA6F供應商 更新時間2025-1-5 9:10:00