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NAND256W3A0BZA6E集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

NAND256W3A0BZA6E
廠商型號(hào)

NAND256W3A0BZA6E

參數(shù)屬性

NAND256W3A0BZA6E 封裝/外殼為55-TFBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLSH 256MBIT PARALLEL 55VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

封裝外殼

55-TFBGA

文件大小

916.59 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-9 15:00:00

NAND256W3A0BZA6E規(guī)格書詳情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NAND256W3A0BZA6E

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    閃存 - NAND

  • 存儲(chǔ)容量:

    256Mb(32M x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    50ns

  • 電壓 - 供電:

    2.7V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    55-TFBGA

  • 供應(yīng)商器件封裝:

    55-VFBGA(8x10)

  • 描述:

    IC FLSH 256MBIT PARALLEL 55VFBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法
22+
BGA
16800
全新進(jìn)口原裝現(xiàn)貨,假一罰十
詢價(jià)
ST
2021+
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
ST
6000
面議
19
DIP/SMD
詢價(jià)
Micron Technology Inc.
24+
55-TFBGA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
Micron Technology Inc.
24+
55-VFBGA(8x10)
56200
一級(jí)代理/放心采購(gòu)
詢價(jià)
22+23+
原廠原包
24190
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
Micron
22+
55VFBGA (8x10)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
ST
1923+
BGA
5896
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
詢價(jià)
ST
23+
BGA
7566
原廠原裝
詢價(jià)
ST
22+
BGA63
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)