首頁(yè)>NAND512R3A>規(guī)格書詳情

NAND512R3A集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

NAND512R3A
廠商型號(hào)

NAND512R3A

參數(shù)屬性

NAND512R3A 封裝/外殼為63-VFBGA;包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLSH 512MBIT PARALLEL 63VFBGA

封裝外殼

63-VFBGA

文件大小

916.59 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-19 9:10:00

人工找貨

NAND512R3A價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

NAND512R3A規(guī)格書詳情

NAND512R3A屬于集成電路(IC)的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND512R3A存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    NAND512R3A2BZA6E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    閃存 - NAND

  • 存儲(chǔ)容量:

    512Mb(64M x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    60ns

  • 電壓 - 供電:

    1.7V ~ 1.95V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    63-VFBGA

  • 供應(yīng)商器件封裝:

    63-VFBGA(8.5x15)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
23+
TSOP
3960
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢價(jià)
ST
24+
BGA
598000
原裝現(xiàn)貨假一賠十
詢價(jià)
ST/意法
24+
BGA
81
原裝現(xiàn)貨假一賠十
詢價(jià)
ST
1728+
VFBGA-63
6528
只做進(jìn)口原裝正品假一賠十!
詢價(jià)
Micron
24+
BGA
36520
一級(jí)代理/放心采購(gòu)
詢價(jià)
ST
23+
BGA
3000
原裝正品假一罰百!可開增票!
詢價(jià)
MICRON/鎂光
24+
SOT223
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
MICRON/鎂光
22+
BGA
3800
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
詢價(jià)
MICRON
24+
N只做原裝A
10080
原裝正品價(jià)格優(yōu)勢(shì)!歡迎詢價(jià)QQ:385913858TEL:15
詢價(jià)
MICRON
21+
BGA
10000
原裝現(xiàn)貨假一罰十
詢價(jià)