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NAND512W3A0AV6集成電路(IC)的存儲(chǔ)器規(guī)格書(shū)PDF中文資料
廠商型號(hào) |
NAND512W3A0AV6 |
參數(shù)屬性 | NAND512W3A0AV6 封裝/外殼為48-UFSOP(0.606",15.40mm 寬);包裝為管件;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 512MBIT PARALLEL 48WSOP |
功能描述 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
封裝外殼 | 48-UFSOP(0.606",15.40mm 寬) |
文件大小 |
916.59 Kbytes |
頁(yè)面數(shù)量 |
57 頁(yè) |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡(jiǎn)稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-2-5 10:16:00 |
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更多NAND512W3A0AV6規(guī)格書(shū)詳情
NAND512W3A0AV6屬于集成電路(IC)的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND512W3A0AV6存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses
the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
FEATURES SUMMARY
■ HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
■ NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
■ PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■ BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■ PAGE READ / PROGRAM
– Random access: 12μs (max)
– Sequential access: 50ns (min)
– Page program time: 200μs (typ)
■ COPY BACK PROGRAM MODE
– Fast page copy without external buffering
■ FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
■ STATUS REGISTER
■ ELECTRONIC SIGNATURE
■ CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
■ SERIAL NUMBER OPTION
■ HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
■ DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
■ DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
產(chǎn)品屬性
更多- 產(chǎn)品編號(hào):
NAND512W3A0AV6E
- 制造商:
STMicroelectronics
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
管件
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
閃存
- 技術(shù):
閃存 - NAND
- 存儲(chǔ)容量:
512Mb(64M x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁(yè):
50ns
- 電壓 - 供電:
2.7V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
48-UFSOP(0.606",15.40mm 寬)
- 供應(yīng)商器件封裝:
48-WSOP(12x17)
- 描述:
IC FLASH 512MBIT PARALLEL 48WSOP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TSOP48 |
85800 |
原盒原標(biāo),正品現(xiàn)貨 誠(chéng)信經(jīng)營(yíng) 假一罰十 |
詢價(jià) | ||
STMicroelect |
22+ |
TSOP48 |
2000 |
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢! |
詢價(jià) | ||
ST |
21+ |
TSOP48 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST/意法 |
22+ |
TSOP-48 |
9000 |
原裝正品 |
詢價(jià) | ||
22+ |
NA |
3000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | |||
STMicroelectronics |
24+ |
48-WSOP(12x17) |
56200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
STMicroelectronics |
24+ |
TSOP48 |
544 |
詢價(jià) | |||
STMicroelectronics |
24+ |
48-UFSOP(0.606 15.40mm 寬) |
9350 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
SGS |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | ||
STMicroelectronics |
18+ |
ICFLASH512MBIT48WSOP |
6580 |
公司原裝現(xiàn)貨 |
詢價(jià) |