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NAND512W4M0CZB5E中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

NAND512W4M0CZB5E
廠商型號(hào)

NAND512W4M0CZB5E

功能描述

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

文件大小

228.19 Kbytes

頁(yè)面數(shù)量

23 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體(ST)集團(tuán)官網(wǎng)

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更新時(shí)間

2024-11-16 14:19:00

NAND512W4M0CZB5E規(guī)格書(shū)詳情

Summary description

The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory.

Features

■ Multi-Chip Packages

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR LPSDRAM

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 2 dice of 256 Mb (x16) SDR LPSDRAMs

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash +1 die of 256 Mb (x16) DDR LPSDRAM

– 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or 512 Mb (x16) DDR LPSDRAM

■ Supply voltages

– VDDF = 1.7V to 1.95V or 2.5V to 3.6V

– VDDD = VDDQD = 1.7V to 1.9V

■ Electronic Signature

■ ECOPACK? packages

■ Temperature range

– -30 to 85°C

Flash Memory

■ NAND Interface

– x8 or x16 bus width

– Multiplexed Address/ Data

■ Page size

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ Block size

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ Page Read/Program

– Random access: 15μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ Copy Back Program mode

– Fast page copy without external buffering

■ Fast Block Erase

– Block erase time: 2ms (typ)

■ Status Register

■ Data integrity

– 100,000 Program/Erase cycles

– 10 years Data Retention

LPSDRAM

■ Interface: x16 or x 32 bus width

■ Deep Power Down mode

■ 1.8v LVCMOS interface

■ Quad internal Banks controlled by BA0 and BA1

■ Automatic and controlled Precharge

■ Auto Refresh and Self Refresh

– 8,192 Refresh cycles/64ms

– Programmable Partial Array Self Refresh

– Auto Temperature Compensated Self Refresh

■ Wrap sequence: sequential/interleave

■ Burst Termination by Burst Stop command and Precharge command

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
589220
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量
詢價(jià)
ST/意法
22+
BGA
17800
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詢價(jià)
ST
2020+
BGA
80000
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ST
22+
BGA
66900
原廠原裝現(xiàn)貨
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ST/意法
23+
NA/
99
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
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ST
22+
BGA
28600
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ST
23+
BGA
12800
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ST
744
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20
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ST
23+
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25000
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ST
22+
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16900
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