NCE2304

N-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

NCE2305

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

NCE2308X

Marking：2308X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2308Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE2309

Marking：2309；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE2309usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(V6.0ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.GeneralFeatures ●VDS=-60V,ID=-1.6A RDS(ON)

NCE2312X

Marking：2312X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE2312Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas1.8V.Thisdeviceissuitableforuseasa uni-directionalorbi-directionalloadswitch. GeneralFeatures ●VDS=20V,ID=6A RDS(ON)

NCE2321

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

NCE2323

Marking：2323X；Package：SOT-23；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE2323usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-20V,ID=-4.1A RDS(ON)

NCE2333Y

P-Channel 30 V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

NCE25P60K

Marking：NCE25P60K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE25P60Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-50A RDS(ON)

NCE25TC120HD

Marking：TO-263；Package：NCE25TC120HD；1200V, 25A, Trench FS II Fast IGBT

GeneralDescription UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the1200VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features ?TrenchFSIITechnologyoffering ?VerylowVCE(sat)