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NCE40H12A中文資料無錫新潔能股份數(shù)據(jù)手冊PDF規(guī)格書

NCE40H12A
廠商型號

NCE40H12A

功能描述

NCE N-Channel Enhancement Mode Power MOSFET

絲印標(biāo)識

NCE40H12A

封裝外殼

TO-220-3L

文件大小

668.8 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Wuxi NCE Power Semiconductor Co., Ltd
企業(yè)簡稱

NCEPOWER無錫新潔能股份

中文名稱

無錫新潔能股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-3 16:42:00

NCE40H12A規(guī)格書詳情

Description

The NCE40H12A uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =40V,ID =120A

RDS(ON) <3.7mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

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