NDB410AE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
NDB410AE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號：
NDB410AE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
NA/ |
800 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
NATIONAL/TI |
22+ |
SOT-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
FAIRCHILD |
TO-263-2 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
FAIRHILD |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
3000 |
公司存貨 |
詢價 | ||||
MOT/ON |
22+ |
TO- |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
MOT/ON |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價 | ||
MOT/ON |
TO- |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
FAIRCHILD/HA |
23+ |
TO-263 |
9500 |
專業(yè)優(yōu)勢供應(yīng) |
詢價 | ||
NATIONAL/ |
SOT-263 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 |
