NDB508AE中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
NDB508AE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號：
NDB508AE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
NS/國半 |
97+ |
TO-263 |
7560 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
國半 |
TO-263 |
68500 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
FSC |
1816+ |
. |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價(jià) | ||
Insignis Technology Corporatio |
23+/24+ |
84-TFBGA |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
NS |
21+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
MOT/ON |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | ||
24+ |
3000 |
公司存貨 |
詢價(jià) | ||||
MOT/ON |
22+ |
TO- |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
國半 |
TO-263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
