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NDB608A中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NDB608A
廠商型號(hào)

NDB608A

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

73.89 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-3 11:10:00

NDB608A規(guī)格書詳情

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ 175°C maximum junction temperature rating.

■ High density cell design (3 million/in2) for extremely low RDS(ON).

■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
NATIONAL/TI
23+
SOT-263
25600
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
NATIONAL/TI
22+
SOT-263
20000
保證原裝正品,假一陪十
詢價(jià)
FAIRCHILD/仙童
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
24+
3000
公司存貨
詢價(jià)
FSC
TO263
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
FAIRCHILD/仙童
21+
TO263
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
MOT/ON
23+
TO-
10000
公司只做原裝正品
詢價(jià)
MOT/ON
22+
TO-
6000
十年配單,只做原裝
詢價(jià)
LM
16+
TO-263
10000
全新原裝現(xiàn)貨
詢價(jià)
MOT/ON
22+
TO-
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)