NDP610BE中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
NDP610BE規(guī)格書詳情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in2) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
產(chǎn)品屬性
- 型號：
NDP610BE
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO220 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
FSC |
17+ |
TO-220 |
8820 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220 |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
VBsemi |
22+23+ |
TO220 |
8000 |
新到現(xiàn)貨，只做原裝進口 |
詢價 | ||
VBsemi |
24+ |
TO220 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
FSC/NS |
17+ |
TO-220 |
6200 |
詢價 | |||
Fairchild |
24+ |
TO-220AB |
707 |
詢價 | |||
FAIRCHILD/仙童 |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Fairchild仙童 |
22+ |
TO-220AB |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
