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NDP710B中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NDP710B
廠商型號(hào)

NDP710B

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

74 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-24 9:30:00

NDP710B規(guī)格書詳情

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042W.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ 175°C maximum junction temperature rating.

■ High density cell design (3 million/in2) for extremely low RDS(ON).

■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

產(chǎn)品屬性

  • 型號(hào):

    NDP710B

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    N-Channel Enhancement Mode Field Effect Transistor

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